Vishay SQ Type P-Channel Power MOSFET, 2.8 A, 60 V Enhancement, 3-Pin SOT-23 SQ2361ES-T1_GE3
- RS庫存編號:
- 152-6376
- 製造零件編號:
- SQ2361ES-T1_GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 包，共 25 件）*
HK$111.90
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 25 件準備從其他地點送貨
- 最終 17,650 件從 2026年9月09日 起發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 725 | HK$4.476 | HK$111.90 |
| 750 + | HK$4.396 | HK$109.90 |
* 參考價格
- RS庫存編號:
- 152-6376
- 製造零件編號:
- SQ2361ES-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 2.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | SQ | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.177Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Standards/Approvals | AEC-Q101 | |
| Width | 1.4mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 2.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series SQ | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.177Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 1.02mm | ||
Length 3.04mm | ||
Standards/Approvals AEC-Q101 | ||
Width 1.4mm | ||
Automotive Standard AEC-Q101 | ||
TrenchFET® power MOSFET
Material categorization
相关链接
- Vishay SQ Type P-Channel Power MOSFET 60 V Enhancement, 3-Pin SOT-23 SQ2361ES-T1_GE3
- Vishay SQ Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 SQ2309CES-T1_GE3
- Vishay SQ2361CES Type P-Channel Single MOSFETs 60 V Enhancement, 3-Pin SOT-23 SQ2361CES-T1_GE3
- Vishay SQ2361CEES Type P-Channel Single MOSFETs 60 V Enhancement, 3-Pin SOT-23 SQ2361CEES-T1_GE3
- Vishay SQ Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SQ2348CES-T1_GE3
- Vishay SQ2361CES Type P-Channel Single MOSFETs 60 V Enhancement, 3-Pin SOT-23
- Vishay SQ2361CEES Type P-Channel Single MOSFETs 60 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET P-Channel MOSFET -30 V Enhancement, 3-Pin SOT-23 SQ2303CES-T1_GE3