onsemi N-Channel MOSFET, 3 A, 60 V Enhancement, 4-Pin SOT-223 NVF3055L108T1G
- RS庫存編號:
- 163-0802
- 製造零件編號:
- NVF3055L108T1G
- 製造商:
- onsemi
可享批量折扣
查看批量定價選項小計（1000 件, 每卷1000個）*
HK$3,548.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年2月12日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 4000 | HK$3.548 | HK$3,548.00 |
| 5000 + | HK$3.477 | HK$3,477.00 |
* 參考價格
- RS庫存編號:
- 163-0802
- 製造零件編號:
- NVF3055L108T1G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.6nC | |
| Maximum Power Dissipation Pd | 2.1W | |
| Forward Voltage Vf | 0.87V | |
| Maximum Gate Source Voltage Vgs | -15V, +15V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.7mm | |
| Width | 3.7mm | |
| Standards/Approvals | No | |
| Height | 1.65mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.6nC | ||
Maximum Power Dissipation Pd 2.1W | ||
Forward Voltage Vf 0.87V | ||
Maximum Gate Source Voltage Vgs -15V, +15V | ||
Maximum Operating Temperature 175°C | ||
Length 6.7mm | ||
Width 3.7mm | ||
Standards/Approvals No | ||
Height 1.65mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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