STMicroelectronics STI28 N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin I2PAK STI28N60M2
- RS庫存編號:
- 164-6960
- 製造零件編號:
- STI28N60M2
- 製造商:
- STMicroelectronics
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HK$1,207.00
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- 從 2027年3月05日 發貨
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單位 | 每單位 | 每管* | 節省 |
|---|---|---|---|
| 50 - 50 | HK$24.14 | HK$1,207.00 | - |
| 100 - 150 | HK$23.616 | HK$1,180.80 | 2% |
| 200 + | HK$23.144 | HK$1,157.20 | 4% |
* 參考價格
- RS庫存編號:
- 164-6960
- 製造零件編號:
- STI28N60M2
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | I2PAK | |
| Series | STI28 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 170W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.6mm | |
| Height | 9.3mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type I2PAK | ||
Series STI28 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 170W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.6mm | ||
Height 9.3mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Extremely low gate charge
Excellent output capacitance (COSS ) profile
100% avalanche tested
Zener-protected
Extremely low Qg for increased efficiency
Optimized gate charge and capacitance profiles for resonant power supplies (LLC converters)
相关链接
- STMicroelectronics STI28 N-Channel MOSFET 650 V Enhancement, 3-Pin I2PAK STI28N60M2
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