STMicroelectronics STripFET H7 N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-263 STB100N10F7
- RS庫存編號:
- 165-6549
- 製造零件編號:
- STB100N10F7
- 製造商:
- STMicroelectronics
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 卷,共 1000 件)*
HK$18,180.00
库存信息目前无法访问 - 请稍候查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 4000 | HK$18.18 | HK$18,180.00 |
| 5000 + | HK$17.817 | HK$17,817.00 |
* 參考價格
- RS庫存編號:
- 165-6549
- 製造零件編號:
- STB100N10F7
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | STripFET H7 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.35mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series STripFET H7 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 9.35mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 4.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
相关链接
- STMicroelectronics STripFET H7 N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 STB100N10F7
- STMicroelectronics STripFET H7 N-Channel MOSFET 80 V Enhancement, 3-Pin H2PAK STH270N8F7-2
- STMicroelectronics STripFET H7 N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 STD100N10F7
- STMicroelectronics STripFET H7 N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220 STP140N8F7
- STMicroelectronics STripFET II N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263 STB80NF10T4
- STMicroelectronics STripFET H7 N-Channel MOSFET 100 V Enhancement, 8-Pin PowerFLAT
- STMicroelectronics STripFET II N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 STB80NF55L-06T4
- STMicroelectronics STripFET H7 N-Channel MOSFET 100 V Enhancement, 8-Pin PowerFLAT STL110N10F7
