STMicroelectronics STripFET F3 N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin PowerFLAT STL8N10LF3
- RS庫存編號:
- 165-8008
- 製造零件編號:
- STL8N10LF3
- 製造商:
- STMicroelectronics
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
HK$36,483.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年2月08日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | HK$12.161 | HK$36,483.00 |
| 15000 + | HK$11.918 | HK$35,754.00 |
* 參考價格
- RS庫存編號:
- 165-8008
- 製造零件編號:
- STL8N10LF3
- 製造商:
- STMicroelectronics
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerFLAT | |
| Series | STripFET F3 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 20.5nC | |
| Maximum Power Dissipation Pd | 70W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.15mm | |
| Width | 5.2mm | |
| Height | 950μm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerFLAT | ||
Series STripFET F3 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 20.5nC | ||
Maximum Power Dissipation Pd 70W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.15mm | ||
Width 5.2mm | ||
Height 950μm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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