Infineon OptiMOS FD N-Channel MOSFET, 84 A, 200 V Enhancement, 3-Pin TO-263

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小計（1 卷，共 1000 件）*

HK$30,194.00

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RS庫存編號:
166-0877
製造零件編號:
IPB117N20NFDATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

84A

Maximum Drain Source Voltage Vds

200V

Series

OptiMOS FD

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-20V, +20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

65nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

300W

Maximum Operating Temperature

170°C

Standards/Approvals

IEC61249-2-21, JEDEC, Pb-free lead plating, RoHS

Width

9.45mm

Length

10.31mm

Height

4.57mm

Automotive Standard

No

不適用

COO (Country of Origin):
MY

Infineon OptiMOS™ FD Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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