IXYS HiperFET, Polar Type N-Channel MOSFET, 72 A, 600 V Enhancement, 4-Pin SOT-227

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 管,共 10 件)*

HK$3,265.00

Add to Basket
選擇或輸入數量
库存信息目前无法访问 - 请稍候查看

單位
每單位
每管*
10 - 10HK$326.50HK$3,265.00
20 - 30HK$319.97HK$3,199.70
40 +HK$310.37HK$3,103.70

* 參考價格

RS庫存編號:
168-4484
製造零件編號:
IXFN82N60P
製造商:
IXYS
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

72A

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-227

Series

HiperFET, Polar

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

75mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.04kW

Typical Gate Charge Qg @ Vgs

240nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Length

38.2mm

Standards/Approvals

No

Height

9.6mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series


N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

相关链接