IXYS Polar HiPerFET Type N-Channel MOSFET, 200 A, 100 V Enhancement, 4-Pin SOT-227
- RS庫存編號:
- 168-4576
- 製造零件編號:
- IXFN200N10P
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 10 件）*
HK$2,179.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 800 件從 2026年3月09日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 10 - 40 | HK$217.90 | HK$2,179.00 |
| 50 + | HK$213.53 | HK$2,135.30 |
* 參考價格
- RS庫存編號:
- 168-4576
- 製造零件編號:
- IXFN200N10P
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 200A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-227 | |
| Series | Polar HiPerFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 235nC | |
| Maximum Power Dissipation Pd | 680W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 25.07 mm | |
| Standards/Approvals | No | |
| Length | 38.23mm | |
| Height | 9.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 200A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-227 | ||
Series Polar HiPerFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 235nC | ||
Maximum Power Dissipation Pd 680W | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 25.07 mm | ||
Standards/Approvals No | ||
Length 38.23mm | ||
Height 9.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
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