STMicroelectronics STripFET F7 N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-220 STP100N6F7
- RS庫存編號:
- 168-8958
- 製造零件編號:
- STP100N6F7
- 製造商:
- STMicroelectronics
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查看批量定價選項小計（1 管，共 50 件）*
HK$595.00
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單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | HK$11.90 | HK$595.00 |
| 100 - 150 | HK$11.544 | HK$577.20 |
| 200 + | HK$11.198 | HK$559.90 |
* 參考價格
- RS庫存編號:
- 168-8958
- 製造零件編號:
- STP100N6F7
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | STripFET F7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12.6nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.6mm | |
| Length | 10.4mm | |
| Standards/Approvals | No | |
| Height | 9.15mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series STripFET F7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12.6nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 175°C | ||
Width 4.6mm | ||
Length 10.4mm | ||
Standards/Approvals No | ||
Height 9.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
相关链接
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