Infineon BSZ097N10NS5 Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin TSDSON BSZ097N10NS5ATMA1

RS庫存編號:: 170-2342
製造零件編號:: BSZ097N10NS5ATMA1
製造商:: Infineon

Infineon BSZ097N10NS5 Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin TSDSON BSZ097N10NS5ATMA1

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小計（1 包，共 10 件）*

HK$58.60

訂單超過 HK$250.00 免費送貨

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單位	每單位	每包*
10 - 1240	HK$5.86	HK$58.60
1250 +	HK$5.71	HK$57.10

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RS庫存編號:: 170-2342
製造零件編號:: BSZ097N10NS5ATMA1
製造商:: Infineon

規格

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	100V
	Series	BSZ097N10NS5
	Package Type	TSDSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	13mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	69W
	Typical Gate Charge Qg @ Vgs	22nC
	Maximum Operating Temperature	150°C
	Length	3.4mm
	Height	1.1mm
	Width	3.4 mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 100V
	Series BSZ097N10NS5
	Package Type TSDSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 13mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 69W
	Typical Gate Charge Qg @ Vgs 22nC
	Maximum Operating Temperature 150°C
	Length 3.4mm
	Height 1.1mm
	Width 3.4 mm
	Standards/Approvals No
	Automotive Standard No

OptiMOS™ 5 100V, Infineon’s latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS™ 5 100V MOSFETs offer the industry’s lowest R DS(on)

Optimized for synchronous rectification

Ideal for high switching frequency

Output capacitance reduction of up to 44%

R DS(on) reduction of up to 44%

Benefits:

Highest system efficiency

Reduced switching and conduction losses

Less paralleling required

Increased power density

Low voltage overshoot

Target Applications:

Telecom

Server

Solar

Low voltage drives

Light electric vehicles

Adapter

Infineon BSZ097N10NS5 Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin TSDSON BSZ097N10NS5ATMA1

訂單超過 HK$250.00 免費送貨

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