Infineon BSZ097N10NS5 Type N-Channel MOSFET, 40 A, 100 V Enhancement, 8-Pin TSDSON
- RS庫存編號:
- 170-2300
- 製造零件編號:
- BSZ097N10NS5ATMA1
- 製造商:
- Infineon
可享批量折扣
小計(1 卷,共 5000 件)*
HK$30,780.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年3月30日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 5000 | HK$6.156 | HK$30,780.00 |
| 10000 - 45000 | HK$6.033 | HK$30,165.00 |
| 50000 + | HK$5.913 | HK$29,565.00 |
* 參考價格
- RS庫存編號:
- 170-2300
- 製造零件編號:
- BSZ097N10NS5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TSDSON | |
| Series | BSZ097N10NS5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 69W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Width | 3.4 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TSDSON | ||
Series BSZ097N10NS5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 69W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Width 3.4 mm | ||
Automotive Standard No | ||
OptiMOS™ 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS™ 5 100V MOSFETs offer the industrys lowest R DS(on)
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
R DS(on) reduction of up to 44%
Benefits:
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Target Applications:
Telecom
Server
Solar
Low voltage drives
Light electric vehicles
Adapter
相关链接
- Infineon BSZ097N10NS5 Type N-Channel MOSFET 100 V Enhancement, 8-Pin TSDSON BSZ097N10NS5ATMA1
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 25 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON
- Infineon IAUC Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON IAUZ40N06S5L050ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON BSZ025N04LSATMA1
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin TSDSON BSZ0904NSIATMA1
