Infineon OptiMOS Type N-Channel MOSFET, 126 A, 40 V Enhancement, 8-Pin TSDSON BSZ025N04LSATMA1
- RS庫存編號:
- 214-8986
- 製造零件編號:
- BSZ025N04LSATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 15 件）*
HK$129.00
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單位 | 每單位 | 每包* |
|---|---|---|
| 15 - 1245 | HK$8.60 | HK$129.00 |
| 1260 - 2490 | HK$8.38 | HK$125.70 |
| 2505 + | HK$8.253 | HK$123.80 |
* 參考價格
- RS庫存編號:
- 214-8986
- 製造零件編號:
- BSZ025N04LSATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 126A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TSDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Power Dissipation Pd | 69W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.35mm | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 126A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TSDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Power Dissipation Pd 69W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5.35mm | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Automotive Standard No | ||
The Infineon 40V and 60V product families feature not only the industry’s lowest R DS(on) but also a perfect switching behaviour for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness.
100% avalanche tested
Superior thermal resistance
Optimized for synchronous rectification
相关链接
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