Vishay SQ Rugged Type N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SQS462EN-T1_GE3
- RS庫存編號:
- 170-8306
- 製造零件編號:
- SQS462EN-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
HK$10,527.00
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 3,000 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | HK$3.509 | HK$10,527.00 |
| 15000 + | HK$3.439 | HK$10,317.00 |
* 參考價格
- RS庫存編號:
- 170-8306
- 製造零件編號:
- SQS462EN-T1_GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQ Rugged | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 135mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 33W | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.12mm | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQ Rugged | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 135mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 33W | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.12mm | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
相关链接
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SQS462EN-T1_GE3
- Vishay SQ Rugged Type N-Channel MOSFET 20 V Enhancement, 6-Pin TSOP SQ3460EV-T1_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC SQ4431EY-T1_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 40 V Enhancement, 8-Pin SOIC SQ4401EY-T1_GE3
- Vishay SQ Rugged Type N-Channel MOSFET 40 V Enhancement, 5-Pin SO-8 SQJ412EP-T1_GE3
- Vishay Type N-Channel MOSFET -40 V Enhancement, 8-Pin PowerPAK 1212-8 SQS180ELNW-T1_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 40 V Enhancement, 6-Pin TSOP-6 SQ3419EV-T1_GE3
- Vishay SQS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8W SQS460CENW-T1_GE3