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Toshiba N-Channel MOSFET, 92 A, 40 V Enhancement, 8-Pin TSON TPN3R704PL

Name: Toshiba N-Channel MOSFET, 92 A, 40 V Enhancement, 8-Pin TSON TPN3R704PL
Brand: Toshiba
SKU: 171-2363
Availability: BackOrder

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小計（1 包，共 5 件）*

HK$51.40

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規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Toshiba
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	92A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TSON
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	6mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	27nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	86W
	Maximum Operating Temperature	175°C
	Height	0.85mm
	Standards/Approvals	No
	Length	3.1mm
	Width	3.1mm
	Automotive Standard	No

	選取全部
	品牌 Toshiba
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 92A
	Maximum Drain Source Voltage Vds 40V
	Package Type TSON
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 6mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 27nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 86W
	Maximum Operating Temperature 175°C
	Height 0.85mm
	Standards/Approvals No
	Length 3.1mm
	Width 3.1mm
	Automotive Standard No

不適用

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Motor Drivers

High-speed switching

Small gate charge: QSW = 8.1 nC (typ.)

Small output charge: Qoss = 20.2 nC (typ.)

Low drain-source on-resistance: RDS(ON) = 3.0 mΩ (typ.) (VGS = 10 V)

Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)

Enhancement mode: V = 1.4 to 2.4 V (V = 10 V, I = 0.2 mA)

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