服務
Ideas and Advice
折扣優惠
包裹追蹤
登入
主目錄
製造零件編號
最近搜索
Automation & Control Gear
Cables & Wires
Enclosures & Server Racks
Fuses & Circuit Breakers
HVAC, Fans & Thermal Management
Lighting
Relays & Signal Conditioning
Switches
Batteries & Chargers
Connectors
Displays & Optoelectronics
ESD Control, Cleanroom & PCB Prototyping
Passive Components
Power Supplies & Transformers
Raspberry Pi, Arduino, ROCK, STEM Education & Development Tools
Semiconductors
Access, Storage & Material Handling
Adhesives, Sealants & Tapes
Bearings & Seals
Engineering Materials & Industrial Hardware
Fasteners & Fixings
Hand Tools
Mechanical Power Transmission
Plumbing & Pipeline
Pneumatics & Hydraulics
Power Tools, Soldering & Welding
Computing & Peripherals
Facilities Cleaning & Maintenance
Office Supplies
Personal Protective Equipment & Workwear
Security & Ironmongery
Site Safety
Test & Measurement
Semiconductors
Discrete Semiconductors
MOSFETs
N-Channel MOSFET, 93 A, 100 V, 8-Pin SOP Toshiba TPH4R50ANH
RS庫存編號:
171-2377
製造零件編號:
TPH4R50ANH
製造商:
Toshiba
查看所有MOSFETs
3705 現貨庫存,可於3工作日發貨。
Add to Basket
單位
添加到購物車
即時庫存查詢
添加到收藏夾
單價 个(每托盘 5 )
HK$15.748
單位
每單位
每包*
5 +
HK$15.748
HK$78.74
* 參考價格
包裝方式:
標準包裝
行業包裝
RS庫存編號:
171-2377
製造零件編號:
TPH4R50ANH
製造商:
Toshiba
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
規格
Datasheet
ESD Control Selection Guide V1
豁免
符合聲明
DC-DC Converters
Switching Voltage Regulators
Motor Drivers
Small, thin package
High-speed switching
Small gate charge: QSW = 22 nC (typ.)
Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
93 A
Maximum Drain Source Voltage
100 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5mm
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.95mm