Toshiba Single N-Channel MOSFET, 6 A, 30 V Enhancement, 3-Pin SOT-23 SSM3K333R
- RS庫存編號:
- 171-2399
- 製造零件編號:
- SSM3K333R
- 製造商:
- Toshiba
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- RS庫存編號:
- 171-2399
- 製造零件編號:
- SSM3K333R
- 製造商:
- Toshiba
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.8mm | |
| Length | 2.9mm | |
| Height | 800μm | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Width 1.8mm | ||
Length 2.9mm | ||
Height 800μm | ||
- COO (Country of Origin):
- TH
4.5V drive
Low ON-resistance: RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V)
RDS(ON) = 28 mΩ (max) (@VGS = 10 V)
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