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Toshiba Type P-Channel MOSFET, 8 A, 60 V Enhancement, 3-Pin TO-252 TJ8S06M3L

Name: Toshiba Type P-Channel MOSFET, 8 A, 60 V Enhancement, 3-Pin TO-252 TJ8S06M3L
Brand: Toshiba
SKU: 171-2492
Availability: InStock

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小計（1 包，共 10 件）*

HK$86.60

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規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Toshiba
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	130mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	27W
	Typical Gate Charge Qg @ Vgs	19nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Length	6.5mm
	Height	2.3mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Toshiba
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 130mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 27W
	Typical Gate Charge Qg @ Vgs 19nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Length 6.5mm
	Height 2.3mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

不適用

Applications

Automotive

Motor Drivers

DC-DC Converters

Switching Voltage Regulators

Features

Low drain-source on-resistance: RDS(ON) = 80 mΩ (typ.) (VGS = -10 V)

Low leakage current: IDSS = -10 μA (max) (VDS = -60V)

Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA)

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