Vishay IRFB11N50A N-Channel Power MOSFET, 11 A, 500 V Enhancement, 3-Pin TO-220AB IRFB11N50APBF
- RS庫存編號:
- 178-0823
- 製造零件編號:
- IRFB11N50APBF
- 製造商:
- Vishay
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HK$749.60
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單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | HK$14.992 | HK$749.60 |
| 100 - 150 | HK$14.666 | HK$733.30 |
| 200 + | HK$14.34 | HK$717.00 |
* 參考價格
- RS庫存編號:
- 178-0823
- 製造零件編號:
- IRFB11N50APBF
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220AB | |
| Series | IRFB11N50A | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 520mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Maximum Power Dissipation Pd | 170W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Width | 4.7mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220AB | ||
Series IRFB11N50A | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 520mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Maximum Power Dissipation Pd 170W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 9.01mm | ||
Length 10.41mm | ||
Width 4.7mm | ||
Automotive Standard No | ||
Vishay IRFB11N50A Series Power MOSFET, 500V Drain Source Voltage, 11A Continuous Drain Current - IRFB11N50APBF
This power MOSFET is a high-voltage N-channel switching device designed for through-hole board mounting in industrial and power electronics contexts. It operates across a wide temperature span, supports substantial switching currents and voltages, and is supplied in a TO-220AB package for straightforward heatsinking and chassis attachment.
Features and Benefits:
• 500V drain rating enables high-voltage switching applications
• 11A continuous drain current supports heavy load handling
• 170W maximum dissipation allows significant power switching
• 520mΩ Rds(on) gives predictable conduction losses
• 52nC typical gate charge permits controlled gate-drive design
• 30V gate limit protects against excessive drive voltages
• 11A continuous drain current supports heavy load handling
• 170W maximum dissipation allows significant power switching
• 520mΩ Rds(on) gives predictable conduction losses
• 52nC typical gate charge permits controlled gate-drive design
• 30V gate limit protects against excessive drive voltages
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive switching stages
• Used with discrete MOSFET assemblies in power inverters
• Can be used for switch-mode power regulators and controllers
• Appropriate for laboratory power test rigs and prototypes
• Ideal for industrial motor-drive switching stages
• Used with discrete MOSFET assemblies in power inverters
• Can be used for switch-mode power regulators and controllers
• Appropriate for laboratory power test rigs and prototypes
What thermal range can I expect for field and storage conditions?
It functions between -55°C and 150°C, allowing use in harsh ambient environments.
How is the device mounted and cooled in a system?
The TO-220AB through-hole format permits bolting to an external heatsink or chassis for enhanced thermal transfer.
What gate-drive considerations are important to prevent damage?
Keep gate voltage within a 30V limit and design the driver to charge approximately 52nC to switch reliably.
How does the forward voltage affect conduction in circuits?
The forward voltage of 1.5V will influence total system losses during conduction and should be included in thermal and efficiency calculations.
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