Vishay IRFI N-Channel Power MOSFET, 6.6 A, 500 V Enhancement, 3-Pin TO-220FP IRFIB7N50APBF
- RS庫存編號:
- 178-0825
- 製造零件編號:
- IRFIB7N50APBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 50 件）*
HK$1,030.80
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 400 個，準備發貨
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | HK$20.616 | HK$1,030.80 |
| 100 - 150 | HK$19.998 | HK$999.90 |
| 200 + | HK$19.396 | HK$969.80 |
* 參考價格
- RS庫存編號:
- 178-0825
- 製造零件編號:
- IRFIB7N50APBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 6.6A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220FP | |
| Series | IRFI | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.52Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.83mm | |
| Standards/Approvals | RoHS 2002/95/EC | |
| Length | 10.63mm | |
| Height | 9.8mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 6.6A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220FP | ||
Series IRFI | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.52Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Operating Temperature 150°C | ||
Width 4.83mm | ||
Standards/Approvals RoHS 2002/95/EC | ||
Length 10.63mm | ||
Height 9.8mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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