Vishay IRF N-Channel MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220 IRF820APBF
- RS庫存編號:
- 178-0833
- 製造零件編號:
- IRF820APBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
享受批量購買折扣
額外添加100件可節省HK$21.80
查看批量定價選項小計（1 管，共 50 件）*
HK$503.90
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 550 個，準備發貨
單位 | 每單位 | 每管* | 節省 |
|---|---|---|---|
| 50 - 50 | HK$10.078 | HK$503.90 | - |
| 100 - 150 | HK$9.86 | HK$493.00 | HK$21.80 |
| 200 + | HK$9.64 | HK$482.00 | HK$87.60 |
* 參考價格
- RS庫存編號:
- 178-0833
- 製造零件編號:
- IRF820APBF
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220 | |
| Series | IRF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7mm | |
| Standards/Approvals | No | |
| Length | 10.41mm | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220 | ||
Series IRF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Width 4.7mm | ||
Standards/Approvals No | ||
Length 10.41mm | ||
Height 9.01mm | ||
Automotive Standard No | ||
The Vishay power MOSFET has low gate charge Qg results in simple drive requirement and it has improved gate, avalanche and dynamic dV/dt ruggedness.
Operating junction and storage temperature range - 55 to + 150°C
相关链接
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