Vishay Siliconix TrenchFET Type P-Channel MOSFET, 3.6 A, 40 V Enhancement, 3-Pin SOT-23

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RS庫存編號:
178-3663
製造零件編號:
Si2319DDS-T1-GE3
製造商:
Vishay Siliconix
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品牌

Vishay Siliconix

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3.6A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

12.5nC

Maximum Power Dissipation Pd

1.7W

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.02mm

Standards/Approvals

No

Length

3.04mm

Automotive Standard

No

豁免

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 75mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 1.7W and continuous drain current of 3.6A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications


• Battery switch

• Load switch

• Motor drive control

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested

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