Vishay TrenchFET P-Channel MOSFET, -3.1 A, -20 V Enhancement, 3-Pin SOT-23 SI2301HDS-T1-GE3
- RS庫存編號:
- 735-212
- 製造零件編號:
- SI2301HDS-T1-GE3
- 製造商:
- Vishay
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- RS庫存編號:
- 735-212
- 製造零件編號:
- SI2301HDS-T1-GE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -3.1A | |
| Maximum Drain Source Voltage Vds | -20V | |
| Package Type | SOT-23 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.142Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.6W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Typical Gate Charge Qg @ Vgs | 5.5nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -3.1A | ||
Maximum Drain Source Voltage Vds -20V | ||
Package Type SOT-23 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.142Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.6W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8V | ||
Typical Gate Charge Qg @ Vgs 5.5nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
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