Vishay TrenchFET Type N-Channel MOSFET, 3.1 A, 100 V Enhancement, 3-Pin SOT-23 SI2392ADS-T1-GE3
- RS庫存編號:
- 180-7811
- 製造零件編號:
- SI2392ADS-T1-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 包，共 20 件）*
HK$74.70
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 1,140 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 740 | HK$3.735 | HK$74.70 |
| 760 - 1480 | HK$3.645 | HK$72.90 |
| 1500 + | HK$3.585 | HK$71.70 |
* 參考價格
- RS庫存編號:
- 180-7811
- 製造零件編號:
- SI2392ADS-T1-GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | TrenchFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 189mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series TrenchFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 189mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source resistance of 126mohm at a gate-source voltage of 10V. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. The MOSFET has a minimum and a maximum driving voltage of 4.5V and 10V respectively. It has continuous drain current of 3.1A and maximum power dissipation of 2.5W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Boost converters
• DC/DC converters
• LED backlighting in LCD TVs
• Load switch
• Power management for mobile computing
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
相关链接
- Vishay TrenchFET P-Channel MOSFET -20 V Enhancement, 3-Pin SOT-23 SI2301HDS-T1-GE3
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- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2303CDS-T1-GE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23 SI2318HDS-T1-GE3
- Vishay TrenchFET N channel-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2302HDS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 80 V Enhancement, 3-Pin SOT-23 Si2387DS-T1-GE3