Vishay TrenchFET Type P-Channel MOSFET, 3 A, 80 V Enhancement, 3-Pin SOT-23 Si2387DS-T1-GE3
- RS庫存編號:
- 228-2814
- 製造零件編號:
- Si2387DS-T1-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 包，共 25 件）*
HK$105.50
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年10月04日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | HK$4.22 | HK$105.50 |
| 50 - 75 | HK$4.148 | HK$103.70 |
| 100 - 225 | HK$4.064 | HK$101.60 |
| 250 - 975 | HK$3.996 | HK$99.90 |
| 1000 + | HK$3.924 | HK$98.10 |
* 參考價格
- RS庫存編號:
- 228-2814
- 製造零件編號:
- Si2387DS-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | TrenchFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series TrenchFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Automotive Standard No | ||
The Vishay TrenchFET Gen IV P-Channel power MOSFET is use for load switch, circuit protection and motor drive control.
100 % Rg and UIS tested
相关链接
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