Vishay Siliconix TrenchFET Type N-Channel MOSFET, 14.4 A, 250 V Enhancement, 8-Pin SO-8
- RS庫存編號:
- 178-3665
- 製造零件編號:
- Si7190ADP-T1-RE3
- 製造商:
- Vishay Siliconix
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
HK$28,263.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年5月10日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | HK$9.421 | HK$28,263.00 |
| 6000 - 9000 | HK$9.139 | HK$27,417.00 |
| 12000 + | HK$8.865 | HK$26,595.00 |
* 參考價格
- RS庫存編號:
- 178-3665
- 製造零件編號:
- Si7190ADP-T1-RE3
- 製造商:
- Vishay Siliconix
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14.4A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 56.8W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 14.9nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5.99mm | |
| Height | 1.07mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14.4A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 56.8W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 14.9nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5.99mm | ||
Height 1.07mm | ||
Automotive Standard No | ||
豁免
- COO (Country of Origin):
- CN
TrenchFET® power MOSFET
Low thermal resistance PowerPAK® package
相关链接
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