Vishay Siliconix TrenchFET Type N-Channel MOSFET, 60 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SiSS12DN-T1-GE3
- RS庫存編號:
- 178-3920
- 製造零件編號:
- SiSS12DN-T1-GE3
- 製造商:
- Vishay Siliconix
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
HK$82.30
訂單超過 HK$250.00 免費送貨
最後的 RS 庫存
- 最終 14,910 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | HK$8.23 | HK$82.30 |
| 750 - 1490 | HK$8.02 | HK$80.20 |
| 1500 + | HK$7.90 | HK$79.00 |
* 參考價格
- RS庫存編號:
- 178-3920
- 製造零件編號:
- SiSS12DN-T1-GE3
- 製造商:
- Vishay Siliconix
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay Siliconix | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK 1212 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Maximum Power Dissipation Pd | 65.7W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.15mm | |
| Height | 1.07mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay Siliconix | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK 1212 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Maximum Power Dissipation Pd 65.7W | ||
Maximum Operating Temperature 150°C | ||
Length 3.15mm | ||
Height 1.07mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
豁免
- COO (Country of Origin):
- CN
TrenchFET® Gen IV power MOSFET
Very low RDS(on) in a compact and thermally enhanced package
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
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