Vishay TrenchFET N-Channel MOSFET, 9.5 A, 80 V Enhancement, 8-Pin SO-8 SI4896DY-T1-E3
- RS庫存編號:
- 180-7961
- 製造零件編號:
- SI4896DY-T1-E3
- 製造商:
- Vishay
可享批量折扣
查看批量定價選項小計（5 件, 每袋5個）*
HK$134.70
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年11月01日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 620 | HK$26.94 | HK$134.70 |
| 625 - 1245 | HK$26.26 | HK$131.30 |
| 1250 + | HK$25.88 | HK$129.40 |
* 參考價格
- RS庫存編號:
- 180-7961
- 製造零件編號:
- SI4896DY-T1-E3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 9.5A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.56W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.2mm | |
| Length | 5mm | |
| Height | 1.75mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 9.5A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.56W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 6.2mm | ||
Length 5mm | ||
Height 1.75mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 16.5mohm at a gate-source voltage of 10V. It has power dissipation of 1.56W and continuous drain current of 6.7A. The minimum and a maximum driving voltage for this MOSFET is 6V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Adaptor switch
• Load switches
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
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