Vishay 1 N-Channel Power MOSFET, 1.4 A, 800 V TO-220FP IRFIBE20GPBF
- RS庫存編號:
- 180-8329
- 製造零件編號:
- IRFIBE20GPBF
- 製造商:
- Vishay
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- RS庫存編號:
- 180-8329
- 製造零件編號:
- IRFIBE20GPBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220FP | |
| Maximum Drain Source Resistance Rds | 6.5Ω | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 30W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220FP | ||
Maximum Drain Source Resistance Rds 6.5Ω | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 30W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRFIBE20G is a N-channel power MOSFET having drain to source(Vds) voltage of 800V.The gate to source voltage(VGS) is 20V. It is having TO-220 FULLPAK package. It offers drain to source resistance (RDS.) 6.5ohms at 10VGS.
Isolated package
High voltage isolation = 2.5 kVrms (t = 60 s; f = 60 Hz)
Sink to lead creepage distance = 4.8 mm
相关链接
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