Vishay Single 1 N-Channel MOSFET, 7.7 A, 100 V, 3-Pin IRFU120PBF
- RS庫存編號:
- 180-8351
- 製造零件編號:
- IRFU120PBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 75 件）*
HK$586.275
訂單超過 HK$250.00 免費送貨
有庫存
- 2,400 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 75 - 75 | HK$7.817 | HK$586.28 |
| 150 - 225 | HK$7.58 | HK$568.50 |
| 300 + | HK$7.355 | HK$551.63 |
* 參考價格
- RS庫存編號:
- 180-8351
- 製造零件編號:
- IRFU120PBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Mount Type | Surface, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.27Ω | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 42W | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Directive 2011/65/EU, RoHS, JEDEC JS709A | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Mount Type Surface, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.27Ω | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 42W | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Directive 2011/65/EU, RoHS, JEDEC JS709A | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay IRFU120 is a N-channel power MOSFET having drain to source(Vds) voltage of 100V.The gate to source voltage(VGS) is 20V. It is having DPAK (TO-252) and IPAK (TO-251) package. It offers drain to source resistance (RDS.) 0..27ohms at 10VGS.
Dynamic dV/dt rating
Repetitive avalanche rated
Surface mount
相关链接
- Vishay Single 1 Type N-Channel MOSFET 100 V, 3-Pin IRFU120PBF
- Vishay Type N-Channel MOSFET 60 V, 3-Pin IPAK IRFU014PBF
- Vishay Type N-Channel MOSFET 60 V, 3-Pin TO-252 IRLR014PBF
- Vishay Type N-Channel MOSFET 100 V, 3-Pin TO-252 IRFR120PBF
- Vishay IRLU Type N-Channel MOSFET 60 V Enhancement, 3-Pin IPAK IRLU014PBF
- Vishay IRLR Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IRLR014TRPBF
- Vishay IRFR Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 IRFR014TRPBF
- Infineon Type N-Channel MOSFET 30 V N, 8-Pin TO-252