ROHM RJ1L12BGN Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263AB RJ1L12BGNTLL

可享批量折扣
查看批量定價選項

小計(1 包,共 2 件)*

HK$105.20

Add to Basket
選擇或輸入數量
最後的 RS 庫存
  • 最終 30 個,準備發貨

單位
每單位
每包*
2 - 8HK$52.60HK$105.20
10 - 18HK$51.25HK$102.50
20 - 198HK$50.00HK$100.00
200 +HK$48.75HK$97.50

* 參考價格

RS庫存編號:
183-6004
製造零件編號:
RJ1L12BGNTLL
製造商:
ROHM
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263AB

Series

RJ1L12BGN

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

175nC

Maximum Power Dissipation Pd

192W

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

10.4mm

Height

4.7mm

Width

9.2mm

Standards/Approvals

RoHS

COO (Country of Origin):
KP
RJ1L12BGN is low on-resistance and small surface mount package MOSFET for switching application.

Low on - resistance

High power small mold package

Pb-free lead plating

Halogen free

相关链接

第一時間了解我們的最新產品和優惠

電郵

您在訂閱此郵件時提供的個人信息將根據《隱私政策》進行處理。