ROHM RJ1L12BGN N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-263AB RJ1L12BGNTLL

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小計(1 包,共 2 件)*

HK$126.20

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每單位
每包*
2 - 8HK$63.10HK$126.20
10 - 18HK$61.50HK$123.00
20 - 198HK$60.00HK$120.00
200 +HK$58.50HK$117.00

* 參考價格

RS庫存編號:
183-6004
製造零件編號:
RJ1L12BGNTLL
製造商:
ROHM
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品牌

ROHM

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263AB

Series

RJ1L12BGN

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

175nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

192W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

9.2mm

Height

4.7mm

Length

10.4mm

COO (Country of Origin):
KP
RJ1L12BGN is low on-resistance and small surface mount package MOSFET for switching application.

Low on - resistance

High power small mold package

Pb-free lead plating

Halogen free

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