製造零件編號

ROHM RJ1 Type N-Channel Single MOSFETs, 150 V Enhancement, 3-Pin TO-263AB RJ1R04BBHTL1

RS庫存編號:: 646-551
製造零件編號:: RJ1R04BBHTL1
製造商:: ROHM

ROHM RJ1 Type N-Channel Single MOSFETs, 150 V Enhancement, 3-Pin TO-263AB RJ1R04BBHTL1

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小計（1 組，共 2 件）*

HK$35.70

訂單超過 HK$250.00 免費送貨

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加上 100 件從 2026年4月27日起發貨

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單位	每單位	每膠帶*
2 - 18	HK$17.85	HK$35.70
20 - 98	HK$15.75	HK$31.50
100 - 198	HK$14.10	HK$28.20
200 +	HK$13.70	HK$27.40

* 參考價格

RS庫存編號:: 646-551
製造零件編號:: RJ1R04BBHTL1
製造商:: ROHM

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Drain Source Voltage Vds	150V
	Package Type	TO-263AB
	Series	RJ1
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	27mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	37nC
	Maximum Power Dissipation Pd	89W
	Maximum Operating Temperature	150°C
	Height	4.77mm
	Length	15.5mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 ROHM
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Drain Source Voltage Vds 150V
	Package Type TO-263AB
	Series RJ1
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 27mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 37nC
	Maximum Power Dissipation Pd 89W
	Maximum Operating Temperature 150°C
	Height 4.77mm
	Length 15.5mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - RJ1R04BBHTL1

The ROHM N channel 150 volt 40 ampere power metal oxide semiconductor field effect transistor features low on resistance, a high power package type TO two six three AB, lead free plating, and is restriction of hazardous substances compliant.

Halogen free

100% Rg and UIS tested

ROHM RJ1 Type N-Channel Single MOSFETs, 150 V Enhancement, 3-Pin TO-263AB RJ1R04BBHTL1

訂單超過 HK$250.00 免費送貨

批量購買價格選項

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