N-Channel MOSFET, 30 A, 600 V, 3-Pin TO-220 Vishay SIHA100N60E-GE3

RS庫存編號:: 188-4870
製造零件編號:: SIHA100N60E-GE3
製造商:: Vishay

N-Channel MOSFET, 30 A, 600 V, 3-Pin TO-220 Vishay SIHA100N60E-GE3

17 現貨庫存，可於3工作日發貨。

單價毎管：50 个

HK$29.906

單位	每單位	Per Tube*
50 - 50	HK$29.906	HK$1,495.30
100 - 150	HK$29.256	HK$1,462.80
200 +	HK$28.606	HK$1,430.30

* 參考價格

RS庫存編號:: 188-4870
製造零件編號:: SIHA100N60E-GE3
製造商:: Vishay

Datasheet SIHA100N60E-GE3

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	100 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	35 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±30 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	4.7mm
Typical Gate Charge @ Vgs	33 nC @ 10 V
Length	10.3mm
Height	15.3mm
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V