Vishay SiSS92DN Type N-Channel MOSFET, 12.3 A, 250 V Enhancement, 8-Pin PowerPAK 1212
- RS庫存編號:
- 188-4908
- 製造零件編號:
- SiSS92DN-T1-GE3
- 製造商:
- Vishay
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可享批量折扣
小計（1 卷，共 3000 件）*
HK$15,552.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年5月12日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | HK$5.184 | HK$15,552.00 |
| 15000 + | HK$5.029 | HK$15,087.00 |
* 參考價格
- RS庫存編號:
- 188-4908
- 製造零件編號:
- SiSS92DN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12.3A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | PowerPAK 1212 | |
| Series | SiSS92DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10.4nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65.8W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Height | 0.78mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12.3A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type PowerPAK 1212 | ||
Series SiSS92DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10.4nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65.8W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Height 0.78mm | ||
Automotive Standard No | ||
N-Channel 250 V (D-S) MOSFET.
TrenchFET® with ThunderFET technology optimizes balance of RDS(on), Qg, Qsw, and Qoss
Leadership RDS(on) and RDS-Coss FOM
相关链接
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