STMicroelectronics N-Channel MOSFET, 80 A, 55 V Enhancement, 3-Pin TO-263 STB80NF55-06T4

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣
查看批量定價選項

小計(1 卷,共 1000 件)*

HK$14,940.00

Add to Basket
選擇或輸入數量
库存信息目前无法访问 - 请稍候查看

單位
每單位
每卷*
1000 - 4000HK$14.94HK$14,940.00
5000 +HK$14.492HK$14,492.00

* 參考價格

RS庫存編號:
188-8284
製造零件編號:
STB80NF55-06T4
製造商:
STMicroelectronics
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Typical Gate Charge Qg @ Vgs

142nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

9.35mm

Length

10.4mm

Height

4.37mm

Automotive Standard

No

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Exceptional dv/dt capability

Application oriented characterization

Applications

Switching application

Applications

Switching application

相关链接

第一時間了解我們的最新產品和優惠

電郵

您在訂閱此郵件時提供的個人信息將根據《隱私政策》進行處理。