STMicroelectronics N-Channel MOSFET, 10 A, 650 V Enhancement, 3-Pin TO-252 STD11N60DM2
- RS庫存編號:
- 188-8285
- 製造零件編號:
- STD11N60DM2
- 製造商:
- STMicroelectronics
此圖片僅供參考,請參閲產品詳細資訊及規格
暫時無法供應
我們無法確定此產品何時有貨,RS 預計將其從我們的產品目錄中移除。
- RS庫存編號:
- 188-8285
- 製造零件編號:
- STD11N60DM2
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 420mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 16.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.17mm | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Width | 6.2mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 420mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 16.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 25V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 2.17mm | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Width 6.2mm | ||
Automotive Standard No | ||
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
相关链接
- STMicroelectronics N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 STD11N60DM2
- STMicroelectronics N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 STD11N65M2
- STMicroelectronics STD N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 STD86N3LH5
- STMicroelectronics MDmesh M2 N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 STD9N60M2
- STMicroelectronics MDmesh M2 N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 STD6N60M2
- STMicroelectronics MDmesh M5 N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 STD16N65M5
- STMicroelectronics MDmesh M2 N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 STD13N65M2
- Infineon IPD N-Channel MOSFET 650 V Enhancement TO-252 IPD60R280PFD7SAUMA1
