STMicroelectronics N-Channel MOSFET, 7 A, 710 V Enhancement, 3-Pin TO-252
- RS庫存編號:
- 188-8467P
- 製造零件編號:
- STD8N65M5
- 製造商:
- STMicroelectronics
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可享批量折扣
查看批量定價選項小計（625 件, 以卷裝提供）*
HK$16,612.50
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年1月25日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 625 - 1245 | HK$26.58 |
| 1250 + | HK$26.12 |
* 參考價格
- RS庫存編號:
- 188-8467P
- 製造零件編號:
- STD8N65M5
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 710V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 70W | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.17mm | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Width | 6.2mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 710V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 70W | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 150°C | ||
Height 2.17mm | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Width 6.2mm | ||
Automotive Standard No | ||
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Worldwide best RDS(on) area
Higher VDSSrating
High dv/dt capability
Excellent switching performance
Easy to drive
Applications
Switching applications
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