Wolfspeed C3M Type N-Channel MOSFET, 22 A, 900 V Enhancement, 7-Pin TO-263 C3M0120090J
- RS庫存編號:
- 192-3378
- 製造零件編號:
- C3M0120090J
- 製造商:
- Wolfspeed
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 50 件）*
HK$4,110.80
訂單超過 HK$250.00 免費送貨
有庫存
- 50 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | HK$82.216 | HK$4,110.80 |
| 100 - 150 | HK$79.748 | HK$3,987.40 |
| 200 + | HK$78.154 | HK$3,907.70 |
* 參考價格
- RS庫存編號:
- 192-3378
- 製造零件編號:
- C3M0120090J
- 製造商:
- Wolfspeed
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Wolfspeed | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Series | C3M | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17.3nC | |
| Maximum Power Dissipation Pd | 83W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.23mm | |
| Standards/Approvals | No | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Wolfspeed | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 900V | ||
Series C3M | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17.3nC | ||
Maximum Power Dissipation Pd 83W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.8V | ||
Maximum Operating Temperature 150°C | ||
Length 10.23mm | ||
Standards/Approvals No | ||
Height 4.57mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.
New low-impedance package with driver source
High-speed switching with low capacitances
High blocking voltage with low RDS(on)
Avalanche ruggedness
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
相关链接
- Wolfspeed C3M Type N-Channel MOSFET 900 V Enhancement, 7-Pin TO-263
- Wolfspeed C3M Type N-Channel MOSFET 900 V Enhancement, 7-Pin TO-263
- Wolfspeed C3M Type N-Channel MOSFET 900 V Enhancement, 7-Pin TO-263 C3M0280090J
- Wolfspeed C3M Type N-Channel MOSFET 900 V Enhancement, 7-Pin TO-263-7 C3M0065090J
- Wolfspeed C3M Type N-Channel MOSFET 1 kV Enhancement, 8-Pin TO-263
- Wolfspeed C3M Type N-Channel MOSFET 1 kV Enhancement, 8-Pin TO-263 C3M0120100J
- Wolfspeed C3M Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263
- Wolfspeed C3M Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-247