STMicroelectronics Type N-Channel MOSFET, 5.5 A, 600 V Enhancement, 8-Pin PowerFLAT
- RS庫存編號:
- 192-4656
- 製造零件編號:
- STL10N60M6
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
HK$30,834.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2026年9月28日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | HK$10.278 | HK$30,834.00 |
| 15000 + | HK$9.97 | HK$29,910.00 |
* 參考價格
- RS庫存編號:
- 192-4656
- 製造零件編號:
- STL10N60M6
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerFLAT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 660mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.8nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 48W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.95mm | |
| Standards/Approvals | No | |
| Length | 6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerFLAT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 660mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.8nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 48W | ||
Maximum Operating Temperature 150°C | ||
Height 0.95mm | ||
Standards/Approvals No | ||
Length 6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
Zener-protected
相关链接
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 8-Pin PowerFLAT STL10N60M6
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 5-Pin PowerFLAT
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 5-Pin PowerFLAT
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 5-Pin PowerFLAT STL45N60DM6
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 5-Pin PowerFLAT STL26N60DM6
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 600 V Enhancement, 5-Pin PowerFLAT
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 600 V Enhancement, 5-Pin PowerFLAT STL36N55M5
- STMicroelectronics MDmesh II Type N-Channel MOSFET 600 V Enhancement, 8-Pin PowerFLAT (3.3 x 3.3) HV STL3NM60N