STMicroelectronics Single 1 N-Channel, 25 A, 650 V Enhancement, 3-Pin TO-220 STP26N65DM2
- RS庫存編號:
- 192-4952
- 製造零件編號:
- STP26N65DM2
- 製造商:
- STMicroelectronics
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- RS庫存編號:
- 192-4952
- 製造零件編號:
- STP26N65DM2
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Transistor Configuration | Single | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Maximum Continuous Drain Current (Id) | 25 A | |
| Maximum Drain Source Voltage (Vds) | 650 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | TO-220 | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 1.6 V | |
| Height | 15.75 mm | |
| Length | 10.4 mm | |
| Maximum Drain Source Resistance (Rds) | 190 Ω | |
| Maximum Gate Source Voltage (Vgs) | 25 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 160 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface, Through Hole, Through Hole | |
| Standards/Approvals | FCC Part 68, RoHS, TIA-1096-A | |
| Typical Gate Charge (Qg) @ Vgs | 35.5 nC | |
| Width | 4.6 mm | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Transistor Configuration Single | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Maximum Continuous Drain Current (Id) 25 A | ||
Maximum Drain Source Voltage (Vds) 650 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type TO-220 | ||
Automotive Standard No | ||
Forward Voltage (Vf) 1.6 V | ||
Height 15.75 mm | ||
Length 10.4 mm | ||
Maximum Drain Source Resistance (Rds) 190 Ω | ||
Maximum Gate Source Voltage (Vgs) 25 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 160 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface, Through Hole, Through Hole | ||
Standards/Approvals FCC Part 68, RoHS, TIA-1096-A | ||
Typical Gate Charge (Qg) @ Vgs 35.5 nC | ||
Width 4.6 mm | ||
- COO (Country of Origin):
- CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and Ideal for bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
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