onsemi N-Channel MOSFET, 313 A, 40 V Enhancement, 8-Pin DFN
- RS庫存編號:
- 195-8977
- 製造零件編號:
- NVMFSC0D9N04C
- 製造商:
- onsemi
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查看批量定價選項小計（1 卷，共 3000 件）*
HK$80,289.00
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單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | HK$26.763 | HK$80,289.00 |
| 6000 - 9000 | HK$26.228 | HK$78,684.00 |
| 12000 + | HK$25.703 | HK$77,109.00 |
* 參考價格
- RS庫存編號:
- 195-8977
- 製造零件編號:
- NVMFSC0D9N04C
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 313A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.87mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Maximum Power Dissipation Pd | 166W | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.1mm | |
| Height | 6.25mm | |
| Standards/Approvals | No | |
| Width | 950μm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 313A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.87mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Maximum Power Dissipation Pd 166W | ||
Maximum Operating Temperature 175°C | ||
Length 5.1mm | ||
Height 6.25mm | ||
Standards/Approvals No | ||
Width 950μm | ||
Automotive Standard AEC-Q101 | ||
The On Semiconductor dual cool power N-channel MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. In this wettable flank option available for enhanced optical inspection.
Advanced dual−sided cooled packaging
Small footprint for compact design
Ultra low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
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