Vishay EF N-Channel Power MOSFET, 29 A, 650 V Enhancement, 3-Pin TO-220AB SiHP105N60EF-GE3

RS庫存編號:: 200-6794
製造零件編號:: SiHP105N60EF-GE3
製造商:: Vishay

Vishay EF N-Channel Power MOSFET, 29 A, 650 V Enhancement, 3-Pin TO-220AB SiHP105N60EF-GE3

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小計（1 卷，共 50 件）*

HK$1,359.40

訂單超過 HK$250.00 免費送貨

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最終 50 個，準備發貨

單位	每單位	每卷*
50 - 50	HK$27.188	HK$1,359.40
100 - 150	HK$26.598	HK$1,329.90
200 +	HK$26.006	HK$1,300.30

* 參考價格

RS庫存編號:: 200-6794
製造零件編號:: SiHP105N60EF-GE3
製造商:: Vishay

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選取全部	屬性	值
	品牌	Vishay
	Channel Type	N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	29A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220AB
	Series	EF
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	88mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	208W
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	53nC
	Maximum Operating Temperature	150°C
	Height	14.4mm
	Standards/Approvals	RoHS
	Width	4.65mm
	Length	10.52mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 29A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220AB
	Series EF
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 88mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 208W
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 53nC
	Maximum Operating Temperature 150°C
	Height 14.4mm
	Standards/Approvals RoHS
	Width 4.65mm
	Length 10.52mm
	Automotive Standard No

Document- SiHP105N60EF-GE3

Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 29A Continuous Drain Current - SiHP105N60EF-GE3

This power MOSFET is a high-voltage switching device designed for demanding power-conversion and control roles in industrial and electronic systems. It is an N-channel enhancement-mode transistor supplied in a through-hole TO-220AB package, intended to handle elevated voltages and sustained currents while operating across a wide temperature span.

Features and Benefits:

• 650V drain rating enables high-voltage switching applications
• 29A continuous drain capability supports substantial load currents
• 208W maximum dissipation allows high-power handling
• 88mΩ Rds(on) minimises conduction losses at rated conditions
• 53nC typical gate charge optimises switching energy and drive requirements
• 30V gate tolerance permits robust gate-drive margins

Applications

• Suitable for SMPS primary-side switching stages
• Ideal for industrial motor-drive inverter sections
• Used for high-voltage DC-DC converters in power supplies
• Can be used for electronic load and power-test equipment
• Used with discrete switch topologies in power factor correction

What thermal extremes can it withstand in operation?

The device is specified to operate from -55°C up to 150°C, permitting use in both cold-start environments and elevated-temperature installations.

How is it mounted and integrated into a PCB design?

It uses a through-hole TO-220AB package with three pins and a mounting tab for heatsinking, allowing straightforward board fixation and thermal management via a heatsink attached to the tab.

What gate-drive considerations should be observed?

The maximum gate-to-source rating is 30V

gate-drive voltages should be kept within this limit and matched to the 53nC typical gate charge to ensure efficient switching without overstressing the gate.

What forward voltage characteristic is relevant during conduction?

The forward voltage is 1.2V, which informs conduction-loss calculations in low-voltage current paths and body-diode performance assessments.

Vishay EF N-Channel Power MOSFET, 29 A, 650 V Enhancement, 3-Pin TO-220AB SiHP105N60EF-GE3

訂單超過 HK$250.00 免費送貨

Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 29A Continuous Drain Current - SiHP105N60EF-GE3

Features and Benefits:

Applications

What thermal extremes can it withstand in operation?

How is it mounted and integrated into a PCB design?

What gate-drive considerations should be observed?

What forward voltage characteristic is relevant during conduction?

相关链接

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Vishay EF N-Channel Power MOSFET, 29 A, 650 V Enhancement, 3-Pin TO-220AB SiHP105N60EF-GE3

訂單超過 HK$250.00 免費送貨

批量購買價格選項

Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 29A Continuous Drain Current - SiHP105N60EF-GE3

Features and Benefits:

Applications

What thermal extremes can it withstand in operation?

How is it mounted and integrated into a PCB design?

What gate-drive considerations should be observed?

What forward voltage characteristic is relevant during conduction?

相关链接

第一時間了解我們的最新產品和優惠