STMicroelectronics SCTW90 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 3-Pin Hip-247
- RS庫存編號:
- 201-0886
- 製造零件編號:
- SCTW90N65G2V
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 30 件）*
HK$9,063.09
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年2月01日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 120 | HK$302.103 | HK$9,063.09 |
| 150 + | HK$296.063 | HK$8,881.89 |
* 參考價格
- RS庫存編號:
- 201-0886
- 製造零件編號:
- SCTW90N65G2V
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 119A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SCTW90 | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 157nC | |
| Maximum Power Dissipation Pd | 565W | |
| Forward Voltage Vf | 2.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Length | 15.75mm | |
| Height | 20.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 119A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SCTW90 | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 157nC | ||
Maximum Power Dissipation Pd 565W | ||
Forward Voltage Vf 2.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Length 15.75mm | ||
Height 20.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 119A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very high operating junction temperature capability (TJ = 175 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances
相关链接
- STMicroelectronics SCTW90 Type N-Channel MOSFET 650 V Enhancement, 3-Pin Hip-247 SCTW90N65G2V
- STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET 650 V Enhancement, 4-Pin Hip-247
- STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET 650 V Enhancement, 4-Pin Hip-247 SCTWA90N65G2V-4
- STMicroelectronics SCTW35 Type N-Channel MOSFET 650 V Enhancement, 3-Pin Hip-247
- STMicroelectronics SCTW35 Type N-Channel MOSFET 650 V Enhancement, 3-Pin Hip-247 SCTW35N65G2V
- STMicroelectronics SCTWA35N65G2V-4 Type N-Channel MOSFET 650 V Enhancement, 4-Pin Hip-247
- STMicroelectronics SCT N channel-Channel Power MOSFET 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG
- STMicroelectronics SCTWA35N65G2V-4 Type N-Channel MOSFET 650 V Enhancement, 4-Pin Hip-247 SCTWA35N65G2V-4