STMicroelectronics SCT N-Channel MOSFET, 33 A, 1.2 kV Depletion, 3-Pin Hip-247 SCTW40N120G2VAG
- RS庫存編號:
- 202-5489
- 製造零件編號:
- SCTW40N120G2VAG
- 製造商:
- STMicroelectronics
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查看批量定價選項小計（1 管，共 30 件）*
HK$6,355.80
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年6月21日 發貨
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單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | HK$211.86 | HK$6,355.80 |
| 60 - 90 | HK$207.617 | HK$6,228.51 |
| 120 + | HK$201.387 | HK$6,041.61 |
* 參考價格
- RS庫存編號:
- 202-5489
- 製造零件編號:
- SCTW40N120G2VAG
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | Hip-247 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.105Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 290W | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 3.4V | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Length | 15.75mm | |
| Width | 5.15mm | |
| Height | 34.95mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type Hip-247 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.105Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 290W | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 3.4V | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Length 15.75mm | ||
Width 5.15mm | ||
Height 34.95mm | ||
Automotive Standard No | ||
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Very fast and robust intrinsic body diode
Low capacitance
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