onsemi NTH N-Channel MOSFET, 29 A, 1.2 kV Enhancement, 3-Pin TO-247 NTHL160N120SC1

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小計(1 管,共 450 件)*

HK$19,895.40

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450 - 450HK$44.212HK$19,895.40
900 +HK$42.892HK$19,301.40

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RS庫存編號:
202-5706
製造零件編號:
NTHL160N120SC1
製造商:
onsemi
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品牌

onsemi

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

1.2kV

Package Type

TO-247

Series

NTH

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

110mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

34nC

Maximum Gate Source Voltage Vgs

25V

Maximum Power Dissipation Pd

119W

Maximum Operating Temperature

175°C

Height

20.82mm

Length

15.87mm

Standards/Approvals

RoHS

Width

4.82mm

Automotive Standard

No

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 17 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC/DC Converter, boost inverter.

160mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant

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