onsemi NVB N-Channel MOSFET, 60 A, 1.2 kV Enhancement, 7-Pin TO-263

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小計(1 卷,共 800 件)*

HK$132,704.00

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1600 - 2400HK$162.562HK$130,049.60
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RS庫存編號:
202-5730
製造零件編號:
NVBG040N120SC1
製造商:
onsemi
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品牌

onsemi

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

1.2kV

Package Type

TO-263

Series

NVB

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

56mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

106nC

Maximum Gate Source Voltage Vgs

25V

Maximum Power Dissipation Pd

178W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

15.7mm

Width

4.7mm

Standards/Approvals

AEC-Q101

Length

10.2mm

Automotive Standard

No

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK−7L Silicon Carbide MOSFET, N-Channel, 1200 V, 40 mΩ, D2PAK-7L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 60 Ampere and 1200 Volts. It can be used in Automotive on board charger, DC or DC Converter applications.

AEC Q101 qualified

Production part approval process Capable

100% avalanche tested

Low effective output capacitance

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