Vishay EF Type N-Channel Power MOSFET, 16 A, 600 V Enhancement, 3-Pin TO-220 SIHF068N60EF-GE3
- RS庫存編號:
- 204-7248
- 製造零件編號:
- SIHF068N60EF-GE3
- 製造商:
- Vishay
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HK$28,468.00
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- 從 2027年2月22日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 4000 | HK$28.468 | HK$28,468.00 |
| 5000 + | HK$27.899 | HK$27,899.00 |
* 參考價格
- RS庫存編號:
- 204-7248
- 製造零件編號:
- SIHF068N60EF-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | EF | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 68mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 39W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Width | 10mm | |
| Standards/Approvals | RoHS | |
| Height | 4.6mm | |
| Length | 28.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series EF | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 68mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 39W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Width 10mm | ||
Standards/Approvals RoHS | ||
Height 4.6mm | ||
Length 28.6mm | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 600V Maximum Drain Source Voltage, 16A Maximum Continuous Drain Current - SIHF068N60EF-GE3
This power MOSFET is a high-voltage N-channel switching device designed for use in power conversion and control circuits where robust voltage handling and through-hole mounting are required. It operates across a broad temperature range and is suited to applications demanding sustained drain current and controlled gate-drive characteristics, presented in a TO-220 through-hole package for conventional board assembly.
Features and Benefits:
• 600V drain voltage for high-voltage switching applications
• 16A continuous drain current for sustained load handling
• 68mΩ Rds(on) to reduce conduction losses
• 51nC typical gate charge for predictable switching control
• 39W maximum power dissipation for thermal planning
• ±30V gate tolerance to accommodate varied gate-drive amplitudes
• 16A continuous drain current for sustained load handling
• 68mΩ Rds(on) to reduce conduction losses
• 51nC typical gate charge for predictable switching control
• 39W maximum power dissipation for thermal planning
• ±30V gate tolerance to accommodate varied gate-drive amplitudes
Applications
• Suitable for industrial power converters and inverters
• Ideal for high-voltage motor drive stages
• Used for power supplies requiring through-hole mounting
• Can be used for switching elements in lighting controllers
• Suitable for test rigs and repair of legacy hardware
• Ideal for high-voltage motor drive stages
• Used for power supplies requiring through-hole mounting
• Can be used for switching elements in lighting controllers
• Suitable for test rigs and repair of legacy hardware
What temperature extremes can it tolerate during operation?
It is specified to function from -55°C up to 150°C, allowing use in environments with wide thermal variation.
How does the package aid thermal management on a populated board?
The TO-220 through-hole format permits attachment of a heatsink to its exposed tab, enabling improved dissipation up to its 39W rating when appropriately mounted.
What gate-drive considerations are necessary for switching performance?
Design should account for the 51nC gate charge when sizing drivers to achieve desired rise/fall times and switching losses at target frequencies.
What type of channel and conduction mode does it use?
It is an N-channel device operating in enhancement mode, requiring a positive gate-source drive to conduct.
相关链接
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