Vishay Dual SiSF06DN 2 Type N-Channel MOSFET, 101 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISF06DN-T1-GE3
- RS庫存編號:
- 204-7259
- 製造零件編號:
- SISF06DN-T1-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
HK$17,901.00
訂單超過 HK$250.00 免費送貨
暫時缺貨
- 從 2027年9月21日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | HK$5.967 | HK$17,901.00 |
| 6000 - 9000 | HK$5.848 | HK$17,544.00 |
| 12000 + | HK$5.672 | HK$17,016.00 |
* 參考價格
- RS庫存編號:
- 204-7259
- 製造零件編號:
- SISF06DN-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 101A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK 1212 | |
| Series | SiSF06DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0045Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 69.4W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Height | 0.73mm | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 101A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK 1212 | ||
Series SiSF06DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0045Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 69.4W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Height 0.73mm | ||
Length 3.3mm | ||
Width 3.3mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Common Drain Dual N-Channel 30 V (S1-S2) MOSFET is an integrated common-drain n-channel MOSFETs in a compact and thermally enhanced package.
Very low source-to-source on resistance
TrenchFET Gen IV power MOSFET
相关链接
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