onsemi SUPERFET III N-Channel MOSFET & Diode, 13 A, 800 V Enhancement, 3-Pin TO-252
- RS庫存編號:
- 205-2497
- 製造零件編號:
- NTD360N80S3Z
- 製造商:
- onsemi
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可享批量折扣
查看批量定價選項小計（1 卷，共 2500 件）*
HK$31,637.50
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單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | HK$12.655 | HK$31,637.50 |
| 5000 - 7500 | HK$12.402 | HK$31,005.00 |
| 10000 + | HK$12.154 | HK$30,385.00 |
* 參考價格
- RS庫存編號:
- 205-2497
- 製造零件編號:
- NTD360N80S3Z
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | SUPERFET III | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25.3nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 96W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.55mm | |
| Length | 9.35mm | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series SUPERFET III | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25.3nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 96W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Width 5.55mm | ||
Length 9.35mm | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III series N-channel 800V MOSFET is optimized for primary switch of fly back converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal zener diode significantly improves ESD capability. This new family enables make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies.
Continuous Drain Current rating is 13A
Drain to source on resistance rating is 360mohm
Ultra low gate charge
Low stored energy in output capacitance
100% avalanche tested
Package type is D-PAK
相关链接
- onsemi SUPERFET III N-Channel MOSFET & Diode 800 V Enhancement, 3-Pin TO-252 NTD360N80S3Z
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