DiodesZetex Dual DMC3060 2 Type P, Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 6-Pin TSOT DMC3060LVT-7
- RS庫存編號:
- 206-0061
- 製造零件編號:
- DMC3060LVT-7
- 製造商:
- DiodesZetex
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HK$76.50
訂單超過 HK$250.00 免費送貨
有庫存
- 加上 2,050 件從 2026年6月03日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 725 | HK$3.06 | HK$76.50 |
| 750 - 1475 | HK$2.984 | HK$74.60 |
| 1500 + | HK$2.94 | HK$73.50 |
* 參考價格
- RS庫存編號:
- 206-0061
- 製造零件編號:
- DMC3060LVT-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMC3060 | |
| Package Type | TSOT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.16W | |
| Forward Voltage Vf | 0.8V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMC3060 | ||
Package Type TSOT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.16W | ||
Forward Voltage Vf 0.8V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The DiodesZetex 30V complementary pair enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 12 V with 0.83W thermal power dissipation.
Low input capacitance
Fast switching speed
相关链接
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