DiodesZetex DMP2900 Type P-Channel MOSFET, 600 mA, 20 V Enhancement, 3-Pin SOT-323
- RS庫存編號:
- 206-0114
- 製造零件編號:
- DMP2900UW-7
- 製造商:
- DiodesZetex
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HK$110.70
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- 最終 300 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 700 | HK$2.214 | HK$110.70 |
| 750 - 1450 | HK$2.158 | HK$107.90 |
| 1500 + | HK$2.124 | HK$106.20 |
* 參考價格
- RS庫存編號:
- 206-0114
- 製造零件編號:
- DMP2900UW-7
- 製造商:
- DiodesZetex
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 600mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-323 | |
| Series | DMP2900 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.7nC | |
| Maximum Power Dissipation Pd | 0.3W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Length | 2mm | |
| Width | 1.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101, AEC-Q100, AEC-Q200 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 600mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-323 | ||
Series DMP2900 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.7nC | ||
Maximum Power Dissipation Pd 0.3W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 6V | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Length 2mm | ||
Width 1.8mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200 | ||
- COO (Country of Origin):
- CN
The DiodesZetex 20V P- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 6V with 0.3 W thermal power dissipation.
Low on-resistance
Low input capacitance
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